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| 1N4531, 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode Max. 0.45 Max. 1.9 Min. 27.5 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Continuous Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non-repetitive Peak Forward Current at t = 1 s at t = 1 ms at t = 1 s Symbol VRRM VR IF IFRM IFSM Ptot Tj TS Value 75 75 200 450 4 1 0.5 500 200 - 65 to + 200 Unit V V mA mA A mW O Power Dissipation Junction Temperature Storage Temperature Range C C O Characteristics at Tj = 25 OC Parameter Forward Voltage at IF = 10 mA Reverse Current at VR = 20 V at VR = 50 V at VR = 20 V, Tj = 150 OC at VR = 50 V, Tj = 150 OC Diode Capacitance at f = 1 MHz Reverse Recovery Time at IF = 10 mA, IR = 60 mA, RL = 100 at IF = 10 mA, IR = 10 mA, RL = 100 Forward Recovery Voltage at IF = 100 mA, tr 30 ns Thermal Resistance from Junction to Ambient 1N4531 1N4532 1N4531 1N4532 1N4531 1N4532 1N4531 1N4532 1N4532 Symbol VF IR IR IR IR Cd Cd trr trr trr Vfr Max. 1 25 100 50 100 4 2 4 2 4 3 350 Unit V nA nA A A pF pF ns ns ns V K/W RthJA SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 23/06/2007 |
Price & Availability of 1N4531
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